Volume 5, Issue 4, August 2016, Page: 18-22
Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications
Irene W. Muchira, Department of Electrical and Electronics Engineering, Kirinyaga University College, Kerugoya, Kenya
Walter K. Njoroge, Department of Physics, Kenyatta University, Nairobi, Kenya
Patrick M. Karimi, Institute of Energy Studies and Research, Nairobi, Kenya
Received: Jun. 23, 2016;       Accepted: Jul. 7, 2016;       Published: Jul. 28, 2016
DOI: 10.11648/j.am.20160504.11      View  3537      Downloads  111
In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV.
Chalcogenide Materials, Phase Change Memory, Crystallization Temperature, Transition Temperature
To cite this article
Irene W. Muchira, Walter K. Njoroge, Patrick M. Karimi, Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications, Advances in Materials. Vol. 5, No. 4, 2016, pp. 18-22. doi: 10.11648/j.am.20160504.11
Copyright © 2016 Authors retain the copyright of this article.
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